Semiconductor laser beam bending

Synchronous characterization of semiconductor microcavity laser beam.

We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode ...

Self-bending of a cw laser beam in sodium vapor.

Continuous-wave self-deflection of an asymmetrical laser beam, with a deflection angle up to eight diffraction widths, and strong attenuation of the on-axis radiation were achieved in a short sodium-vapor cell. We determined that the nonlinear refractive index Deltan varied almost linearly with intensity I, Deltan approximately n(2)I, with n(2) ~ -10(-7) cm(2)/W at ~200 degrees C and intensitie...

Beam bending via plasmonic lenses.

We have designed and characterized three different types of plasmonic lenses that cannot only focus, but can also bend electromagnetic (EM) waves. The bending effect is achieved by constructing an asymmetric phase front caused by varying phase retardations in EM waves as they pass through a plasmonic lens. With an incident wave normal to the lens surface, light bends up to 8° off the axial dire...

Bi-directional switching based on semiconductor laser/amplifier with shallow-etched bending ridge waveguide

A new type of optical switching device is developed. For a semiconductor laser amplifier with a shallow-etched bending ridge waveguide, the laser beam could propagate along the bending direction or the straight direction. Switching between the two directions is characterized. With the device fabricated on the substrate with two quantum wells of different widths, switching characteristics are fo...

Temperature-Insensitive Semiconductor Laser